The oxygen solubility in liquid gallium or liquid indium equilibrated
with solid Ga2O3 or In2O3, respectively, was determined in an alumina
crucible which was less reactive than the silica one. After establishm
ent of an equilibrium between the liquid metal (gallium or indium) and
an oxide (Ga2O3 or In2O3) formed on the surface of the metal during m
elting, the oxygen content in quenched gallium or indium was analyzed
by the inert gas fusion-IR absorption method. The optimum conditions f
or oxygen extraction were decided for a furnace power and a bath compo
sition. The temperature dependence of oxygen solubility in liquid gall
ium or liquid indium was expressed as the following equations: log (C
(o) under bar/mass% in liquid gallium) = -6200/ T+2.61(+/-0.119) (T:11
23 similar to 1523 K), log (C (o) under bar/mass% in liquid indium) =
- 6600/T+3.77(+/-0.074) (T:1073 similar to 1373 K). Using the temperat
ure dependence of the oxygen solubility in the present work and the st
andard free energy of formation of Ga2O3 or In2O3 in the literature, t
he standard free energy change for oxygen dissolution in liquid galliu
m or liquid indium could be represented as follows: 1/2O(2)(g)=(O) und
er bar(mass%, in liquid gallium), Delta G degrees = -2.45 x 10(5)+59.6
T(J), 1/2O(2)(g)=(O) under bar(mass%, in liquid indium), Delta G degre
es = -1.79 x 10(5)+33.8T(J).