Based upon the time dependent perturbation technique for coherent ultr
afast pulsed radiation-semiconductor interaction, the transient induce
d polarization has been considered for the analysis of change in the p
ulse shape while propagating through the material. Using the electroma
gnetic treatment, the output held amplitude is obtained. Numerical est
imations are made for a sample of InSb crystal duly irradiated by lead
-salt (PbEuSeTe) diode laser operating in the 2.6-6.6 mu m wavelength
range. The analytical results are in very good agreement with the avai
lable experimental and theoretical results. Copyright (C) 1997 Publish
ed by Elsevier Science Ltd