LASER-INDUCED DESORPTION OF ADATOMS ON SI(100)-2X1 SURFACE

Laser-induced desorption is studied for the Si(100)-2 x 1 surface with metastable adatoms of Si introduced by room-temperature deposition. D esorption of Si atoms is induced at a specific type of adatom configur ations with a yield dependent on fluence super-linearly. This super-li near dependence of the desorption yield can be described satisfactoril y by the two-hole localization mechanism. Also, analysis of the desorp tion yield in terms of a rate equation model indicates that the config uration reactive to desorption is transformed efficiently into differe nt aggregated forms upon photoexcitation. Copyright (C) 1997 Elsevier Science Ltd