LITHOGRAPHY FOR MICROELECTRONICS

Citation
S. Goto et al., LITHOGRAPHY FOR MICROELECTRONICS, Radiation physics and chemistry, 45(3), 1995, pp. 333-348
Citations number
66
Categorie Soggetti
Nuclear Sciences & Tecnology","Chemistry Physical","Physics, Atomic, Molecular & Chemical
ISSN journal
0969806X
Volume
45
Issue
3
Year of publication
1995
Pages
333 - 348
Database
ISI
SICI code
0969-806X(1995)45:3<333:LFM>2.0.ZU;2-8
Abstract
Synchrotron-radiation-based X-ray lithography has been studied for mo re than 15 years as an alternative to conventional UV lithography. Sto rage rings, beamlines, X-ray masks, X-ray steppers and other component s have been developed and optimized for X-ray lithography. Compact rin gs have therefore become commercially available, beamlines have been o ptimized for practical use, and test devices can now be fabricated bec ause of improved total accuracy in the X-ray masks and steppers. This report discusses the status of key techniques involving synchrotron ra diation sources, beamlines, X-ray masks, and X-ray steppers.