MAGNETORESISTANCE AND HALL-EFFECT IN SINGLE-CRYSTAL TBNISN AND DYNISN

Citation
M. Furusawa et al., MAGNETORESISTANCE AND HALL-EFFECT IN SINGLE-CRYSTAL TBNISN AND DYNISN, Journal of magnetism and magnetic materials, 144, 1995, pp. 877-878
Citations number
5
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
03048853
Volume
144
Year of publication
1995
Part
2
Pages
877 - 878
Database
ISI
SICI code
0304-8853(1995)144:<877:MAHIST>2.0.ZU;2-H
Abstract
Experiments on magnetoresistance and Half effect are reported for TbNi Sn and DyNiSn single crystals, which show the multistep magnetization process in magnetic fields up to 8 T at 1.4 K. The magnetoresistance i n TbNiSn and DyNiSn show complicated variation in magnetic fields up t o the saturation field. This remarkable magnetoresistance behavior is presumably due to spin fluctuation related to the magnetic phase.