RESISTIVITY AND HALL-EFFECT OF GDSB AND TMSB

Citation
Dx. Li et al., RESISTIVITY AND HALL-EFFECT OF GDSB AND TMSB, Journal of magnetism and magnetic materials, 144, 1995, pp. 1165-1166
Citations number
6
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
03048853
Volume
144
Year of publication
1995
Part
2
Pages
1165 - 1166
Database
ISI
SICI code
0304-8853(1995)144:<1165:RAHOGA>2.0.ZU;2-S
Abstract
GdSb and TmSb are typical 'model' materials in rare earth compounds. T he former is an exchange interaction only sample and the latter is a C EF only sample. In order to compare the transport properties between t he two samples, we have measured the Hall effect and resistivity of pu re GdSb and TmSb in various fields. The CEF effect and magnetic scatte ring have been observed in both resistivity and Hall effect measuremen ts for TmSb and GdSb, respectively. The mobilities of electrons and ho les as well as the carrier concentration are calculated using the expe rimental data.