ELECTRICAL-RESISTIVITY OF DOPED EUB6 DOWN TO 50 MK

Authors
BATKO I BATKOVA M FLACHBART K MACKO D KONOVALOVA ES PADERNO YB
Citation
I. Batko et al., ELECTRICAL-RESISTIVITY OF DOPED EUB6 DOWN TO 50 MK, Journal of magnetism and magnetic materials, 144, 1995, pp. 1177-1178
Citations number
4
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Journal of magnetism and magnetic materials → ACNP
ISSN journal
03048853
Volume
144
Year of publication
1995
Part
2
Pages
1177 - 1178
Database
ISI
SICI code
0304-8853(1995)144:<1177:EODEDT>2.0.ZU;2-B
Abstract
Results of electrical resistivity measurements of C-doped EuB6 between 50 mK and 300 K are discussed. The attention is concentrated on the h igh residual resistivity of this material below its magnetic transitio n temperature. Results have shown that the high resistivity at lowest temperatures originates from the scattering of conduction electrons on mixed magnetic structure of the sample.