DELAY IN LASING OF WIDE-GAP II-VI LASER-DIODES

Long time delay before lasing in a II-VI laser diode has been observed . Due to this delay, a nominal threshold current increases as the widt h of applied current pulse becomes shorter. This delay is attributed t o the internal Q switching caused by the balance of injected carriers, temperature rise and gain-guiding. By fitting the calculated data to the experimental ones, rates of refractive index change with carrier c oncentration and with temperature have been estimated.