PHOTOEMISSION-STUDY OF CS ON A-SI-H

Authors
Citation
Tw. Pi et al., PHOTOEMISSION-STUDY OF CS ON A-SI-H, Solid state communications, 94(2), 1995, pp. 147-151
Citations number
17
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
94
Issue
2
Year of publication
1995
Pages
147 - 151
Database
ISI
SICI code
0038-1098(1995)94:2<147:POCOA>2.0.ZU;2-I
Abstract
We report a photoemission study of Cs on hydrogenated amorphous silico n (a-Si:H) at room temperature. The alkali adsorbate bonds covalently with the amorphous substrate, but remains neutral at all time. The Cs/ a-Si covalent bonding is strong, in contrast to the crystalline counte rpart where the bonding is weak, and highly polarized. Surface disorde ring facilities in this strong covalent bonding further lessens the ad sorbate-adsorbate interaction, resulting in the absence of Fermi emiss ion.