K. Nakamae et al., POTENTIAL MEASUREMENTS ON FLOATING-FIELD-LIMITING RINGS IN A POWER MOSFET BY AN ELECTRON-BEAM PROBE, Semiconductor science and technology, 10(3), 1995, pp. 249-254
Potentials on the floating guard rings in a power vertical-channel dou
ble-diffused MOS(VDMOS) transistor were measured for the first time us
ing an electron-beam probing system which incorporates a hemispherical
retarding field energy analyser. Problems in measuring the potential
on the VDMOS by an electron beam probe are that strong local fields on
the specimen cause the primary electron beam to shift from the target
position and depress the saturation level of the S curve due to forma
tion of a potential barrier in front of the specimen. In the measureme
nt procedure the primary electron beam shift is corrected by measuring
the shift each time an experimental condition is changed. The influen
ce of depression in the saturation level of the S curve is eliminated
by setting the slice level of the S curve at a low level of less than
the maximum depressed saturation level. Measured results well reflect
the function of the floating guard ring structure.