AB-INITIO CALCULATIONS OF THE BAND-OFFSET AT A ZNSE ZNTE(100) INTERFACE/

Authors
FREYTAG B
Citation
B. Freytag, AB-INITIO CALCULATIONS OF THE BAND-OFFSET AT A ZNSE ZNTE(100) INTERFACE/, Semiconductor science and technology, 10(3), 1995, pp. 270-273
Citations number
36
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
10
Issue
3
Year of publication
1995
Pages
270 - 273
Database
ISI
SICI code
0268-1242(1995)10:3<270:ACOTBA>2.0.ZU;2-R
Abstract
We use the density functional theory in the local density approximatio n and norm-conserving pseudopotentials to calculate the valence band o ffset (VBO) at a ZnSe/ZnTe interlace grown in the (100) direction. The obtained VBO value of 1.09 eV is in excellent agreement with the corr esponding experimental data and with other calculations.