ESSENTIAL PHONON DRAG CONTRIBUTION TO THE LONGITUDINAL NERNST-ETTINGSHAUSEN EFFECT IN DEGENERATED HGSE-FE CRYSTALS

Authors
KULEEV IG LYAPILIN II LONCHAKOV AT TSIDILKOVSKI IM
Citation
Ig. Kuleev et al., ESSENTIAL PHONON DRAG CONTRIBUTION TO THE LONGITUDINAL NERNST-ETTINGSHAUSEN EFFECT IN DEGENERATED HGSE-FE CRYSTALS, Semiconductor science and technology, 10(3), 1995, pp. 314-318
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
10
Issue
3
Year of publication
1995
Pages
314 - 318
Database
ISI
SICI code
0268-1242(1995)10:3<314:EPDCTT>2.0.ZU;2-L
Abstract
The results of measurements of the longitudinal Nernst-Ettingshausen e ffect on Hg1-xFexSe samples with different iron content (0 < x < 0.02) at temperatures T between 10 and 60 K are presented. It is shown that the detected non-monotonic temperature dependence of the Nernst-Ettin gshausen effect at low temperatures is caused by competition between t he phonon drag effect and scattering of electrons by the correlated sy stem of charged Fe3+ iron impurities. Phonon-phonon scattering (the He rring mechanism) and the scattering of phonons on point defects (the R ayleigh mechanism) are taken into account.