NONLOCAL ASPECTS OF BREAKDOWN IN PIN DIODES

Authors
MILLIDGE S HERBERT DC KANE M SMITH GW WIGHT DR
Citation
S. Millidge et al., NONLOCAL ASPECTS OF BREAKDOWN IN PIN DIODES, Semiconductor science and technology, 10(3), 1995, pp. 344-347
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
10
Issue
3
Year of publication
1995
Pages
344 - 347
Database
ISI
SICI code
0268-1242(1995)10:3<344:NAOBIP>2.0.ZU;2-Q
Abstract
Measurements of breakdown voltage in p-i-n diodes with thin i regions are compared with local and non-local theoretical calculations. It is found that overshoot effects compensate for the dead space at high fie lds close to breakdown but that non-local aspects become stronger at l ower fields.