Sputter deposition has become a widely used technique for fabrication
of metal-semiconductor junction devices. In the present paper, the ele
ctrical properties of radio frequency (RF) sputtered In-ZnTe Schottky
diodes have been measured over the temperature range 100-300 K. The tr
ansport properties of the junction were investigated by measuring the
temperature dependence of the dark current-voltage characteristics. Th
e capacitance and conductance measurements on the junctions showed an
appreciable frequency dependence, indicating the presence of deep trap
s and interface states. The observed rapid increase of conductance wit
h temperature was attributed to the presence of surface states which p
ossibly acted as generation recombination centres. Three hole trap lev
els at energies of 0.3, 0.38 and 0.55 eV were detected by deep level t
ransient spectroscopy (DLTS), in the temperature range 100-300 K. Thes
e levels are likely to be present in the compound semiconductors owing
to the increased tendency towards formation of native defects and/or
impurity complexes.