ELECTRICAL-PROPERTIES OF RF-SPUTTERED IN-ZNTE SCHOTTKY DIODES

Sputter deposition has become a widely used technique for fabrication of metal-semiconductor junction devices. In the present paper, the ele ctrical properties of radio frequency (RF) sputtered In-ZnTe Schottky diodes have been measured over the temperature range 100-300 K. The tr ansport properties of the junction were investigated by measuring the temperature dependence of the dark current-voltage characteristics. Th e capacitance and conductance measurements on the junctions showed an appreciable frequency dependence, indicating the presence of deep trap s and interface states. The observed rapid increase of conductance wit h temperature was attributed to the presence of surface states which p ossibly acted as generation recombination centres. Three hole trap lev els at energies of 0.3, 0.38 and 0.55 eV were detected by deep level t ransient spectroscopy (DLTS), in the temperature range 100-300 K. Thes e levels are likely to be present in the compound semiconductors owing to the increased tendency towards formation of native defects and/or impurity complexes.