GROWTH OF HG1-XMNXTE CRYSTALS BY THE TRAVELING HEATER METHOD

Authors
GILLE P ROSSNER U PUHLMANN N NIEBSCH H PIOTROWSKI TT
Citation
P. Gille et al., GROWTH OF HG1-XMNXTE CRYSTALS BY THE TRAVELING HEATER METHOD, Semiconductor science and technology, 10(3), 1995, pp. 353-357
Citations number
28
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
10
Issue
3
Year of publication
1995
Pages
353 - 357
Database
ISI
SICI code
0268-1242(1995)10:3<353:GOHCBT>2.0.ZU;2-P
Abstract
Growth of Hg1-xMnxTe (x approximate to 0.10) crystals by the travellin g heater method (THM) is reported using a source material preparation process that has been previously developed for Hg1-xCdxTe. Feed ingots , as well as THM single crystals, were characterized with special emph asis on the compositional homogeneity that proved to be superior to th e usual results with crystals grown by the Bridgman method so far.