POROUS SEMICONDUCTORS - WHY ONLY SILICON-BASED - A POSSIBLE EXPLANATION

Authors
GORYACHEV DN BELYAKOV LV SRESELI OM YAROSHETSKII ID
Citation
Dn. Goryachev et al., POROUS SEMICONDUCTORS - WHY ONLY SILICON-BASED - A POSSIBLE EXPLANATION, Semiconductor science and technology, 10(3), 1995, pp. 373-374
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
10
Issue
3
Year of publication
1995
Pages
373 - 374
Database
ISI
SICI code
0268-1242(1995)10:3<373:PS-WOS>2.0.ZU;2-K
Abstract
The mechanism of formation of porous silicon under silicon anodization is discussed. A specific feature of silicon is emphasized, i.e. the e ase of disproportionation of its doubly charged ions. A combination of two processes-etching of pores and secondary silicon recrystallizatio n-is proposed to account for some features of porous silicon.