Dn. Goryachev et al., POROUS SEMICONDUCTORS - WHY ONLY SILICON-BASED - A POSSIBLE EXPLANATION, Semiconductor science and technology, 10(3), 1995, pp. 373-374
The mechanism of formation of porous silicon under silicon anodization
is discussed. A specific feature of silicon is emphasized, i.e. the e
ase of disproportionation of its doubly charged ions. A combination of
two processes-etching of pores and secondary silicon recrystallizatio
n-is proposed to account for some features of porous silicon.