OPTICAL PROBING OF FREE-CARRIER PLASMA EFFECTS OF MEV ION-IMPLANTED SILICON

Boron ions have been implanted into silicon st an incident energy of 3 MeV to a dose of 5 x 10(15) cm(-2). Buried conductive layers have bee n formed in the silicon substrate after annealing at 1050 degrees C fo r 20 s. Infrared (IR) reflection spectra in the waven umber range of 5 00-4000 cm(-1) have been measured and interference fringes related to free-carrier plasma effects observed. By detailed theoretical analysis and computer simulation of the IR reflection spectra, the depth profi le of the carrier concentration, the carrier mobility near maximum car rier concentration, and the carrier activation efficiency have been ob tained. The physical interpretation of the results was given.