The piezoresistance and other characteristics of boron doped polycryst
alline diamond films (PDF's) mere determined by analyzing free-standin
g films that had been formed on silicon. These structures were adhered
to a dielectric substrate, and from bending stresses a gauge factor w
as estimated. Subsequently, a monolithic all-diamond pressure sensor w
as designed and fabricated, whereby doped diamond resistors reside on
a dielectric diamond substrate diaphragm, The process and piezoresista
nce behavior of their structure is described [87].