FURTHER EVIDENCE FOR THE B-SI(-)-C-CARBIDE FROM A THEORETICAL-ANALYSIS OF THE HYPERFINE INTERACTIONS( MODEL OF THE BORON ACCEPTOR IN 6H SILICON)

Authors
ADRIAN FJ GREULICHWEBER S SPAETH JM
Citation
Fj. Adrian et al., FURTHER EVIDENCE FOR THE B-SI(-)-C-CARBIDE FROM A THEORETICAL-ANALYSIS OF THE HYPERFINE INTERACTIONS( MODEL OF THE BORON ACCEPTOR IN 6H SILICON), Solid state communications, 94(1), 1995, pp. 41-44
Citations number
9
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
94
Issue
1
Year of publication
1995
Pages
41 - 44
Database
ISI
SICI code
0038-1098(1995)94:1<41:FEFTBF>2.0.ZU;2-C
Abstract
A semiempirical analysis of the sizes and signs of the small boron hyp erfine interaction constants as determined previously by electron nucl ear double resonance in boron-doped 6H silicon carbide shows that the B-Si(-)-C+ model of this centre can account for the highly unusual fea ture of small isotropic and anisotropic boron hyperfine constants that are positive and negative, respectively.