TOPOCHEMICAL CONTROL IN THE SOLID-STATE CONVERSION OF CYCLOTRIGALLAZANE INTO NANOCRYSTALLINE GALLIUM NITRIDE

Citation
Jw. Hwang et al., TOPOCHEMICAL CONTROL IN THE SOLID-STATE CONVERSION OF CYCLOTRIGALLAZANE INTO NANOCRYSTALLINE GALLIUM NITRIDE, Chemistry of materials, 7(3), 1995, pp. 517-525
Citations number
27
Categorie Soggetti
Chemistry Physical","Material Science
Journal title
ISSN journal
08974756
Volume
7
Issue
3
Year of publication
1995
Pages
517 - 525
Database
ISI
SICI code
0897-4756(1995)7:3<517:TCITSC>2.0.ZU;2-7
Abstract
Pyrolysis of powdered samples of cyclotrigallazane, [H2GaNH2](3), unde r a variety of conditions led to nanocrystalline gallium nitride, Ther mogravimetric analysis established that the primary weight loss event occurred at 150 degrees C and mass spectral analysis verified the prod uction of hydrogen with lesser amounts of ammonia. The final weight in the TGA experiments (achieved above 500 degrees C) and the elemental analyses established that the formula of the powder was GaN0.83. Trans mission electron microscopy (TEM) and X-ray line broadening establishe d that the particles were approximately 60 Angstrom in diameter, and h igh-resolution TEM measurements revealed lattice fringes in the images . Modeling the X-ray diffraction data using the Debye equation establi shed that the nanocrystalline GaN had neither the pure wurtzite nor th e pure zinc blende structure, The best fit to the data was found for a random arrangement of stacking planes with an equal amount of cubic a nd hexagonal planes. The nanocrystalline material slowly converted int o the known wurtzite phase at 900 degrees C. Synthesis of bulk GaN at 600 degrees C from Ga2O3 and NH3 produced only the pure wurtzite phase . The synthesis of metastable samples of gallium nitride comprised of such a high percentage of the cubic phase was proposed to result from a topochemical reaction in which the hydrogen elimination (with concom itant Ga-N bond formation) occurs along a reaction coordinate establis hed by the crystal and molecular structure of [H2GaNH2](3).