N-DEPTH PROFILES IN THIN SIO2 GROWN OR PROCESSED IN N2O - THE ROLE OFATOMIC OXYGEN

Authors
CARR EC ELLIS KA BUHRMAN RA
Citation
Ec. Carr et al., N-DEPTH PROFILES IN THIN SIO2 GROWN OR PROCESSED IN N2O - THE ROLE OFATOMIC OXYGEN, Applied physics letters, 66(12), 1995, pp. 1492-1494
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
12
Year of publication
1995
Pages
1492 - 1494
Database
ISI
SICI code
0003-6951(1995)66:12<1492:NPITSG>2.0.ZU;2-K