SILICON DOPING OF GAN USING DISILANE

Authors
ROWLAND LB DOVERSPIKE K GASKILL DK
Citation
Lb. Rowland et al., SILICON DOPING OF GAN USING DISILANE, Applied physics letters, 66(12), 1995, pp. 1495-1497
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
12
Year of publication
1995
Pages
1495 - 1497
Database
ISI
SICI code
0003-6951(1995)66:12<1495:SDOGUD>2.0.ZU;2-E