PIEZOOPTIC EXAMINATION OF BOUND EXCITON RECOMBINATION IN UNIAXIALLY STRAINED CDTE

Citation
Ga. Shepelsky et al., PIEZOOPTIC EXAMINATION OF BOUND EXCITON RECOMBINATION IN UNIAXIALLY STRAINED CDTE, Solid state communications, 94(3), 1995, pp. 237-241
Citations number
13
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
94
Issue
3
Year of publication
1995
Pages
237 - 241
Database
ISI
SICI code
0038-1098(1995)94:3<237:PEOBER>2.0.ZU;2-A
Abstract
Energy position and radiation intensity of the bound exciton annihilat ion lines in CdTe crystals have been obtained experimentally for the d eformation range up to 2 kbar and for various directions of uniaxial c ompression. The nonlinear dependence of the energy peak position and n onmonotonic dependence of radiation intensity of the excitons bound to neutral accepters on deformation was observed. The effective quenchin g of the emission of the acceptor-bound exciton intensity was found in the range of high pressures. Theoretical treatment takes into account the competition of two main recombination channels, namely Auger and radiative ones.