Ga. Shepelsky et al., PIEZOOPTIC EXAMINATION OF BOUND EXCITON RECOMBINATION IN UNIAXIALLY STRAINED CDTE, Solid state communications, 94(3), 1995, pp. 237-241
Energy position and radiation intensity of the bound exciton annihilat
ion lines in CdTe crystals have been obtained experimentally for the d
eformation range up to 2 kbar and for various directions of uniaxial c
ompression. The nonlinear dependence of the energy peak position and n
onmonotonic dependence of radiation intensity of the excitons bound to
neutral accepters on deformation was observed. The effective quenchin
g of the emission of the acceptor-bound exciton intensity was found in
the range of high pressures. Theoretical treatment takes into account
the competition of two main recombination channels, namely Auger and
radiative ones.