MECHANISM OF DEFECT CREATION AND LIGHT-INDUCED-CHANGES IN COMPENSATEDA-SI-H(B, LI) AND A-SI-H(B, P) FILMS

Metastable increase of dark conductivity with light soaking in compens ated a-Si:H(B, Li) is reported for the first time. Similarity in the b ehavior of a-Si:H(B, Li) and a-Si:H(B, P) suggests similar mechanism f or light induced Fermi level shift (Delta E(F)) in both the cases. The kinetics of defect formation, annealing and stretch exponential decay of Delta E(F) infer a process involving light induced structural chan ges. A model has been proposed by which capture of holes at bistable c harge trapping sites by deactivation of boron causes metastable increa se of conductivity.