J. Pelleg, THE INFLUENCE OF INTERSTITIAL IMPURITY ON DIFFUSION IN VANADIUM - CR DIFFUSION IN VANADIUM, Physica status solidi. a, Applied research, 147(2), 1995, pp. 361-371
The influence of an interstitial impurity on the Arrhenius relation of
Cr-51 diffusion in vanadium is investigated over a wide temperature r
ange. Two types of specimens are used with impurity contents beyond th
e quantities usually found in commercial vanadium. Strong curvature si
milar to that observed in titanium or zirconium self-diffusion experim
ents is observed. It is illustrated that non-linear Arrhenius curves c
an be induced by introducing sufficient amounts of interstitial impuri
ties such as oxygen. It is concluded that the curvature in refractory
b.c.c. metals can be associated either with intrinsic factors or extri
nsic effects. The temperature dependence of D in the range of 1420 to
1870 K, obtained by non-linear least squares analysis can be expressed
by D(A) = 89.96 exp[-287.12 kJ mol-1)/RT] + 1.0 x 10(-7) exp[-(129.35
kJ mol-1)/RT] cm2/s and D(B) = 89.88 exp[-(257.99 kJ mol-1)/RT] + 1.0
x 10(-7) exp[-(131.8 kJ mol-1)/RT] cm2/s. Calculated diffusivity data
of Cr diffusion in vanadium from an earlier work in the temperature r
ange 1173 to 1473 K combined with the values of the B specimens of thi
s work can be expressed as D = 90 exp[-288.5 kJ mol-1)/RT] + 1.0 x 10(
-7) exp[-(157.8 kJ mol-1)/RT] cm2 s-1.