SYNTHETIC SEMICONDUCTOR DIAMOND ELECTRODES - PHOTOELECTROCHEMICAL BEHAVIOR OF BORON-DOPED AND UNDOPED POLYCRYSTALLINE THIN-FILMS DEPOSITED FROM THE GAS-PHASE

Authors
SAKHAROVA AY PLESKOV YV DIQUARTO F PIAZZA S SUNSERI C TEREMETSKAYA IG VARNIN VP
Citation
Ay. Sakharova et al., SYNTHETIC SEMICONDUCTOR DIAMOND ELECTRODES - PHOTOELECTROCHEMICAL BEHAVIOR OF BORON-DOPED AND UNDOPED POLYCRYSTALLINE THIN-FILMS DEPOSITED FROM THE GAS-PHASE, Russian journal of electrochemistry, 31(2), 1995, pp. 169-174
Citations number
11
Categorie Soggetti
Electrochemistry
Journal title
Russian journal of electrochemistry → ACNP
ISSN journal
10231935
Volume
31
Issue
2
Year of publication
1995
Pages
169 - 174
Database
ISI
SICI code
1023-1935(1995)31:2<169:SSDE-P>2.0.ZU;2-R
Abstract
Photocurrent spectra were recorded for polycrystalline thin-film synth etic diamond electrodes on tungsten substrate, prepared by the chemica l vapor deposition (CVD) method. The photocurrent threshold energies w ere measured and compared with the impurity and defect level energies in the bandgap of diamond.