M. Carle et al., CRYSTAL-GROWTH AND THERMODYNAMICS OF N-TYPE BI2(TE1-XSEX)3 SINGLE-CRYSTAL SOLID-SOLUTIONS (X-LESS-THAN-OR-EQUAL-TO-0905), Journal of physics and chemistry of solids, 56(2), 1995, pp. 195-199
Bi2(Te1-xSex)3 single crystal solid solutions with x = 0.025 and x = 0
.05 have been grown using the travelling heater method. The first step
of this work was the study of the Bi-Te-Se ternary phase diagram on t
he Bi2Te3-rich side and with excess tellurium. The isoconcentration li
nes for these two compositions have been determined for temperatures r
anging from 550-degrees-C to their melting points. The knowledge of th
is phase diagram allows us to grow homogeneous ingots of high crystall
ine quality. The solidus line on the Te-rich side for these compositio
ns has been determined by Hall effect measurements. This study shows t
hat it is possible to grow thermodynamically well-defined single cryst
als in a reproducible way.