EFFECT OF PRESSURE ON THE METAL-INSULATOR-TRANSITION TEMPERATURE IN THIOSPINEL CUIR2S4

Authors
OOMI G KAGAYAMA T YOSHIDA I HAGINO T NAGATA S
Citation
G. Oomi et al., EFFECT OF PRESSURE ON THE METAL-INSULATOR-TRANSITION TEMPERATURE IN THIOSPINEL CUIR2S4, Journal of magnetism and magnetic materials, 144, 1995, pp. 157-158
Citations number
5
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Journal of magnetism and magnetic materials → ACNP
ISSN journal
03048853
Volume
144
Year of publication
1995
Part
1
Pages
157 - 158
Database
ISI
SICI code
0304-8853(1995)144:<157:EOPOTM>2.0.ZU;2-R
Abstract
Electrical resistance of the thiospinel CuIr2S4 has been measured to c larify the pressure dependence of the metal-insulator transition tempe rature T-M-I. It is found that T-M-I increases with increasing pressur e with a rate of dT(M-I)/dp = 2.8 K/kbar and the transition becomes le ss prominent at high pressure.