MAGNETORESISTANCE IN NI-PT MULTILAYERS WITH PERPENDICULAR AND INPLANEMAGNETIZATION

Citation
B. Almeida et al., MAGNETORESISTANCE IN NI-PT MULTILAYERS WITH PERPENDICULAR AND INPLANEMAGNETIZATION, Journal of magnetism and magnetic materials, 144, 1995, pp. 603-604
Citations number
8
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
03048853
Volume
144
Year of publication
1995
Part
1
Pages
603 - 604
Database
ISI
SICI code
0304-8853(1995)144:<603:MINMWP>2.0.ZU;2-A
Abstract
High resolution magnetoresistance (Delta rho/rho) measurements were ma de on a series of Ni-x-Pt-20 Angstrom samples. Other studies have show n the dominance of perpendicular spontaneous magnetization (M) for x < 17 Angstrom. For thick Ni-layer samples (M in-plane) our Angstrom rho /rho results show the usual Smitt anisotropy with respect to the angle magnetic field/electrical current, while for thin Ni-layer (M perpend icular) Delta rho/rho is always negative. In the intermediate case the coexistence of the mechanisms leads to an anomalous minimum in Delta rho/rho at low fields, when H parallel to I.