FMR INVESTIGATION OF FE(111) THIN-FILMS

The in-plane anisotropy of Fe films deposited by e-beam on Si(111) has been investigated by FMR at X-band frequencies. Resonance field data as a function of the field orientation confirm that the films grow epi taxially with excellent crystallinity in the [111] orientation. We als o show that since the first-order crystal anisotropy energy does not v ary in the (111) plane, it is possible to obtain precise measurements of the small second-order and stress induced in-plane anisotropy, as w ell as minute misorientations from the (111) plane.