VARIATION WITH DEPOSITION TEMPERATURE OF THE FIELD-INDUCED ANISOTROPYIN AMORPHOUS COZRDY THIN-FILMS

The variations of the in-plane uniaxial anisotropy K-u, where K-u is o btained by applying a de magnetic field during deposition, were studie d in amorphous Co95-xZr5Dyx thin films as a function of Dy concentrati on and deposition temperature T-d. For a given composition K-u is maxi mum for the lowest T-d used, i.e. T-d = -100 degrees C and decreases c ontinuously with increasing T-d, following a law close to a linear one . The overall data are explained by the bond-orientational anisotropy mechanism.