ULTRALOW THRESHOLD CURRENT VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH ALAS OXIDE-GAAS DISTRIBUTED BRAGG REFLECTORS

Authors
MACDOUGAL MH DAPKUS PD PUDIKOV V ZHAO HM YANG GM
Citation
Mh. Macdougal et al., ULTRALOW THRESHOLD CURRENT VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH ALAS OXIDE-GAAS DISTRIBUTED BRAGG REFLECTORS, IEEE photonics technology letters, 7(3), 1995, pp. 229-231
Citations number
12
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
7
Issue
3
Year of publication
1995
Pages
229 - 231
Database
ISI
SICI code
1041-1135(1995)7:3<229:UTCVSL>2.0.ZU;2-F
Abstract
An electrically-pumped, vertical-cavity, surface-emitting laser (VCSEL ) using an AIAs oxide-GaAs DBR above the AlGaAs-GaAs-InGaAs gain regio n and a conventional AlAs-GaAs DBR below is described, By selective ox idation, devices with current flow apertures of different areas are fa bricated, and in 8-mu m-square devices, threshold currents as low as 0 .22 mA are achieved, Being the first electrically-pumped VCSEL to util ize the oxide-based DBR, it demonstrates that the oxide-based DBR is o f sufficient quality to realize submilliampere threshold currents.