We demonstrate a spatially-chirped, resonant wavelength in vertical ca
vities grown by Molecular Beam Epitaxy (MBE), The wavelength shift is
achieved by varying the GaAs growth rate across the wafer using backsi
de temperature patterns. We have demonstrated, for the first time, 8-n
m periodic cavity mode shifts in GaAs-AlAs Fabry-Perot vertical caviti
es, The measured rate of mode shift is 5.3 nm/mm. Patterns transfer wi
th a resolution on the millimeter scale.