PERIODIC-MODE SHIFT IN VERTICAL CAVITIES GROWN BY MOLECULAR-BEAM EPITAXY

We demonstrate a spatially-chirped, resonant wavelength in vertical ca vities grown by Molecular Beam Epitaxy (MBE), The wavelength shift is achieved by varying the GaAs growth rate across the wafer using backsi de temperature patterns. We have demonstrated, for the first time, 8-n m periodic cavity mode shifts in GaAs-AlAs Fabry-Perot vertical caviti es, The measured rate of mode shift is 5.3 nm/mm. Patterns transfer wi th a resolution on the millimeter scale.