CHANNELED SUBSTRATE WINDOW TWIN STRIPE GAAS GAALAS VISIBLE LASERS - FABRICATION AND STEADY-STATE ANALYSIS/

GaAs/GaAlAs high-power window stripe lasers have been developed with a uniform active layer in the region adjacent to the device facets and with a curved active layer in the central region. A single-step liquid -phase epitaxy growth is used in the fabrication process to form two i nternal lateral current paths, so allowing for a very simple fabricati on process. The optical coupling between the two stimulation emission regions reduces the beam divergence. The steady-state analysis of such a laser structure, including heating effects, agrees well with experi mental results.