A NEUTRON DAMAGE STUDY OF LIQUID-PHASE EPITAXIAL GAAS AND HIGH-PURITYSILICON

Authors
BUTCHER KSA ALEXIEV D BOLDEMAN JW
Citation
Ksa. Butcher et al., A NEUTRON DAMAGE STUDY OF LIQUID-PHASE EPITAXIAL GAAS AND HIGH-PURITYSILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 95(3), 1995, pp. 355-370
Citations number
66
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
95
Issue
3
Year of publication
1995
Pages
355 - 370
Database
ISI
SICI code
0168-583X(1995)95:3<355:ANDSOL>2.0.ZU;2-1
Abstract
Neutron irradiation studies of silicon and liquid phase epitaxial (LPE ) GaAs Schottky barrier radiation detectors were carried out using 1.1 MeV fast neutrons produced using the Australian Nuclear Science and T echnology Organisation's 3 MeV Van de Graaff accelerator. Neutrons wer e provided by bombardment of a Li-7 target with 3 MeV protons to a max imum fluence of 7 X 10(13) neutrons cm(-2). Neutron damage to the dete ctors was characterised using capacitive deep level transient spectros copy, optical deep level transient conductance spectroscopy, current-v oltage measurements and capacitance-voltage measurements. The degradat ion of Am-241 spectra was also observed.