PHYSICAL-MECHANISMS OF MUTATION INDUCED BY LOW-ENERGY ION-IMPLANTATION

Physical mechanisms of mutation induced by low energy ion implantation are discussed from the point of view of direct and indirect action. I n direct action the average range of 110 keV Fe-56(+) ions implanted i nto wheat embryo was experimentally measured to be 210 +/- 30 nm. Furt her, the energy deposition distribution with implantation depth was ca lculated with the TRIM 88 code from the measured ion concentration imp lanted at different depths. In indirect action, energetic secondary el ectrons, characteristic X-rays and thermal spikes are discussed.