ION-IMPLANTATION FROM THE PAST AND INTO THE FUTURE

This paper is a view of the past, present and future of ion implantati on equipment. From the discovery of charged particles in the last cent ury, a set of apparatus has evolved for processing silicon by implanti ng several dopant species. The equipment is now standardized into two forms (serial medium, batch high) and produced by several major manufa cturers. The technical requirements for device shrinkage in the next s everal generations of silicon products will focus technical ion beam e fforts on lower energy implants with more stable high current beams. T he fundamental change however lies in the market for silicon which is becoming totally dominated by consumer products (such as PCs); the rel entless drive for lower cost memory and soon in microprocessors will f orce implanters to increase ''ions into silicon''.