BEAM ENERGY PURITY IN THE EATON NV-8200P ION IMPLANTER

SIMS analysis has been characterized as a tool for the study of energy contamination and used to investigate the contaminant energies most l ikely to be present in the NV-8200P. By purposely contaminating implan ts with known amounts of specific off-energy ions, we have been able t o demonstrate that for the chosen combinations of desired energy and p ossible contaminant, the SIMS technique has a resolution of less than 1.0% for the higher energy conditions investigated and less than 0.05% for the lower energy conditions. All of the lower energy conditions u sed deceleration. Under these conditions the NV-8200P shows no indicat ion of beam energy contamination. We present the results of the SIMS a nalysis and describe the technique used in this analysis.