CHARGE NEUTRALIZATION IN ION IMPLANTERS

Authors
SMATLAK DL MACK ME MEHTA S
Citation
Dl. Smatlak et al., CHARGE NEUTRALIZATION IN ION IMPLANTERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 22-29
Citations number
21
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
96
Issue
1-2
Year of publication
1995
Pages
22 - 29
Database
ISI
SICI code
0168-583X(1995)96:1-2<22:CNIII>2.0.ZU;2-K
Abstract
The control of wafer charging in high current implantation is the key to maintaining high yield as gate oxide thicknesses decrease. The effe ctiveness of different charge neutralization techniques and different Faraday configurations have been evaluated using an in situ charge sen sor in the Varian E1000 high current ion implanter. The in situ measur ements also aid in understanding the charging process and underscore t he plasma nature of the ion beam.