THE PRECISION-IMPLANT-9500 PLASMA FLOOD SYSTEM - THE ADVANCED SOLUTION TO WAFER CHARGING

Citation
H. Ito et al., THE PRECISION-IMPLANT-9500 PLASMA FLOOD SYSTEM - THE ADVANCED SOLUTION TO WAFER CHARGING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 30-33
Citations number
10
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
ISSN journal
0168583X
Volume
96
Issue
1-2
Year of publication
1995
Pages
30 - 33
Database
ISI
SICI code
0168-583X(1995)96:1-2<30:TPPFS->2.0.ZU;2-P
Abstract
An advanced wafer charge neutralization system based on plasma flood t echnique has been developed to achieve an ideal voltage control on the wafer surface during implantation. The system makes use of the ''self -regulating'' characteristics of low energy plasma electrons that clam p the surface potential within a few volts. Low energy electrons are g enerated in an are discharge plasma chamber combined with an accel/dec el extraction mechanism and are transported to wafers through a guide tube that confines a dense plasma by using a combination of electrosta tic suppression and a magnetic cusp field. The system has been equippe d as standard on the Precision Implant 9500 and shown full yield on va rious charge sensitive devices.