GENERATION AND TRANSPORT OF CONTAMINATION IN HIGH-CURRENT IMPLANTERS

Authors
BLAKE J JONES M MEYYAPPAN N HIROKAWA S SATO M
Citation
J. Blake et al., GENERATION AND TRANSPORT OF CONTAMINATION IN HIGH-CURRENT IMPLANTERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 56-61
Citations number
5
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
96
Issue
1-2
Year of publication
1995
Pages
56 - 61
Database
ISI
SICI code
0168-583X(1995)96:1-2<56:GATOCI>2.0.ZU;2-#
Abstract
Sources and pathways for aluminium contamination in a high current ion implanter are studied by a set of experiments. Changes to implanter d isk and beamline, the intentional introduction of tracer contaminants, and TRIM models of sputtered atom distributions in angle and energy a re used to draw conclusions about mechanisms transporting aluminium to the wafer surface.