J. Blake et al., GENERATION AND TRANSPORT OF CONTAMINATION IN HIGH-CURRENT IMPLANTERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 56-61
Sources and pathways for aluminium contamination in a high current ion
implanter are studied by a set of experiments. Changes to implanter d
isk and beamline, the intentional introduction of tracer contaminants,
and TRIM models of sputtered atom distributions in angle and energy a
re used to draw conclusions about mechanisms transporting aluminium to
the wafer surface.