MEASUREMENT OF THE DISTRIBUTION OF DAMAGE IN ION-IMPLANTED GAAS BY DIFFERENTIAL REFLECTANCE SPECTROSCOPY

Authors
KRAISINGDECHA P GAL M TAN HH JAGADISH C WILLIAMS JS
Citation
P. Kraisingdecha et al., MEASUREMENT OF THE DISTRIBUTION OF DAMAGE IN ION-IMPLANTED GAAS BY DIFFERENTIAL REFLECTANCE SPECTROSCOPY, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 109-112
Citations number
22
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
96
Issue
1-2
Year of publication
1995
Pages
109 - 112
Database
ISI
SICI code
0168-583X(1995)96:1-2<109:MOTDOD>2.0.ZU;2-H
Abstract
The distribution of damage in Si and He implanted GaAs has been studie d using differential reflectance (DR) spectroscopy. This novel and rel atively simple optical technique has high sensitivity and allows the m easurement of damage distributions in a low dose range which is diffic ult to access by other techniques (1 x 10(10)-3 x 10(14) cm(-2)). The effect of crystal orientation ((100), (110) and (111) directions) on t he damage profiles has also been measured. The measured damage profile s, obtained by successively etching the sample and measuring the DR si gnal, have been compared with TRIM simulations. The magnitude and shap e of the damage profiles were found to be very sensitive to crystal or ientation.