SURFACE CHARACTERIZATION OF SEMICONDUCTORS WITH PLASMA AND THERMAL WAVES ANALYSIS

The well characterized (100)-Si surface is used to demonstrate the cap ability of the noncontact measurement of surface recombination velocit y of excess carriers using photothermal heterodyne spectroscopy. The o xidized silicon surface is cleaned by an electron irradiation or by ex cimer laser in ultrahigh vacuum (UHV). The beam induced desorption and changes of surface binding states are monitored by Auger electron spe ctroscopy (AES). During the surface processing in UHV the sample is in situ excited by laser irradiation. The modulated reflectivity is reco rded and charge carrier and thermal wave analysis are carried out to m easure the change of the surface recombination velocity. The influence of ion implantation and annealing on surface recombination velocity a re monitored.