3D MODELING OF ION-IMPLANTATION INTO CRYSTALLINE SILICON - INFLUENCE OF DAMAGE ACCUMULATION ON DOPANT PROFILES

The binary collision code Crystal-TRIM is extended in order to include 3D simulation of damage accumulation during ion bombardment. The prog ram is applied to 200 keV phosphorus implantation into a given rectang ular area on a (100)-Si wafer. Channeling and tilt-angle implantations at three different doses (3 X 10(13), 3 X 10(14) and 3 X 10(15) cm(-2 )) are considered. The increase of radiation damage is described by as suming statistical creation of local amorphous regions. 2D and 1D proj ections of the 3D range distributions are presented. Damage accumulati on leads to enhanced dechanneling and, therefore, to a strong dependen ce of the shape of the range profiles on the implanted dose. The influ ence of damage accumulation on the depth profiles is greater than on t he lateral distributions. The depth profiles calculated by Crystal-TRI M show a good agreement with experimental data.