APPLICATIONS OF FOCUSED ION-BEAMS TO NONDESTRUCTIVE ANALYSES

Nondestructive analysis with focused ion beams (FIBs) has considerable advantages over conventional ion beam or destructive FIB analyses. It meets the requirement by the state-of-the-art semiconductor process d evelopment. Two or three dimensional analyses on ion implanted micro s tructures are possible when it is combined with Rutherford backscatter ing. Soft error immunity in memory chips can be evaluated by a new met hod using a focused ion beam. Recent applications of nondestructive an alysis using FIBs to ion implantation related processes are discussed.