EPR AND X-RAY-DIFFRACTION STUDY OF DAMAGE PRODUCED BY IMPLANTATION OFB IONS (50 KEV, 1 MEV) OR SI IONS (50 KEV, 700 KEV, 1.5 MEV) INTO SILICON

Electron paramagnetic resonance and double crystal X-ray diffraction w ere used to analyse damage accumulation with dose in silicon implanted at room temperature with B and Si ions at 50 keV and MeV energies. El ectron paramagnetic resonance reveals the presence of Si-P3 (neutral t etravacancy), D centers (indicative of amorphous Si), and Sigma center s, which are probably vacancy complexes. The total number of (Sigma D) centers and the depth integral of the lattice strain determined by X-rays increase sublinearly with increasing dose. The sublinearity is interpreted in terms of dynamic annealing of the defects during implan tation. Suggestions are made to explain the differences observed in th e results of Si and B implants.