RECOMBINATION-ENHANCED SUPPRESSION OF DEEP TRAP ACCUMULATION IN SILICON DURING HE-IMPLANTATION( ION)

The influence of in situ forward bias on the accumulation of defect co mplexes in p(+)-n diodes during 75 keV He+ ion implantation has been i nvestigated. Deep level transient spectrometry was used to characteriz e the concentration, spatial distribution and energy levels of implant ation induced deep traps. It was found that in situ forward bias with a current density of 2 A/cm(2) causes more than an order of magnitude suppression of deep trap accumulation. This is attributed to recombina tion enhanced migration of mobile constituents prior to defect complex formation. A new major electron deep trap located at E(c) - 0.55 eV [ 1] was investigated. Its annealing kinetics, charge carrier capture cr oss section, and spatial distribution with respect to previously known deep traps are presented.