PROXIMITY GETTERING OF AU TO ION-BEAM-INDUCED DEFECTS IN SILICON

Authors
WONGLEUNG J WILLIAMS JS ELLIMAN RG NYGREN E EAGLESHAM DJ JACOBSON DC POATE JM
Citation
J. Wongleung et al., PROXIMITY GETTERING OF AU TO ION-BEAM-INDUCED DEFECTS IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 253-256
Citations number
11
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
96
Issue
1-2
Year of publication
1995
Pages
253 - 256
Database
ISI
SICI code
0168-583X(1995)96:1-2<253:PGOATI>2.0.ZU;2-M
Abstract
Rutherford backscattering and transmission electron microscopy have be en used to analyse Au implanted Si (100) samples containing various ty pes of implantation-induced disorder both before and after annealing. Gettering and precipitation phenomena are observed indicating complex diffusion behaviour and Au-defect interactions. For samples containing a subsurface band of internal cavities, almost 100% of implanted Au i s gettered to such cavities when annealed at 850 degrees C for 1 h.