CONTROL OF DEFECTS IN C-PHASE REGROWTH(, GE+, AND ER+ IMPLANTED SI USING POST AMORPHIZATION AND SOLID)

In this paper we report a technique to achieve epitaxial regrowth acro ss phase boundaries (EPIFAB) which annihilates defects in samples impl anted with high doses of C+, Ge+ and Er+ ions. Results are presented c oncerning the application of EPIFAB to the synthesis of SiGe alloys by high dose Ge implantation, showing that end of range (EOR) defects ha ve been annihilated in samples implanted with 3 X 10(16) Ge+/cm(2) and that formation of strain related defects in Ge+ implanted samples (9 X 10(16)/cm(2)) has been inhibited by the implantation of C+ followed by EPIFAB. In addition Cat. I damage [K.S. Jones et al., Appl. Phys. A 45 (1988) 1.] has been annihilated in samples implanted with 6 X 10(1 5) C+/cm(2). Finally it will be shown that the EPIFAB process can be u sed to control defects in Er+ implanted silicon giving an increase in the photoluminescence emission from Er.