POINT-DEFECT INDUCED SPE GROWTH OF NI IMPLANTED SILICON

Authors
VYATKIN AF KUZNETSOV AY
Citation
Af. Vyatkin et Ay. Kuznetsov, POINT-DEFECT INDUCED SPE GROWTH OF NI IMPLANTED SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 271-275
Citations number
16
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
96
Issue
1-2
Year of publication
1995
Pages
271 - 275
Database
ISI
SICI code
0168-583X(1995)96:1-2<271:PISGON>2.0.ZU;2-H
Abstract
In the present paper the solid phase epitaxial (SPE) growth and silici dation in Ni-implanted silicon have been studied. The dependences obse rved have been explained in terms of the phenomenological model of the SPE growth and proposed mechanism of the point defect emission during the silicide formation. It is shown that the flux of interstitial typ e point defects onto the amorphous-crystalline interface enhances the rate of the SPE growth.